JPH0583172B2 - - Google Patents

Info

Publication number
JPH0583172B2
JPH0583172B2 JP62213515A JP21351587A JPH0583172B2 JP H0583172 B2 JPH0583172 B2 JP H0583172B2 JP 62213515 A JP62213515 A JP 62213515A JP 21351587 A JP21351587 A JP 21351587A JP H0583172 B2 JPH0583172 B2 JP H0583172B2
Authority
JP
Japan
Prior art keywords
reactor core
core tube
heating element
furnace
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62213515A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6455821A (en
Inventor
Izuru Izeki
Akihiro Azuma
Kyohiro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP62213515A priority Critical patent/JPS6455821A/ja
Publication of JPS6455821A publication Critical patent/JPS6455821A/ja
Priority to US07/411,224 priority patent/US4925388A/en
Publication of JPH0583172B2 publication Critical patent/JPH0583172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/16—Arrangements of air or gas supply devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
JP62213515A 1987-08-26 1987-08-26 Rapid cooling type heat treating apparatus Granted JPS6455821A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62213515A JPS6455821A (en) 1987-08-26 1987-08-26 Rapid cooling type heat treating apparatus
US07/411,224 US4925388A (en) 1987-08-26 1989-09-22 Apparatus for heat treating substrates capable of quick cooling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213515A JPS6455821A (en) 1987-08-26 1987-08-26 Rapid cooling type heat treating apparatus

Publications (2)

Publication Number Publication Date
JPS6455821A JPS6455821A (en) 1989-03-02
JPH0583172B2 true JPH0583172B2 (en]) 1993-11-25

Family

ID=16640467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213515A Granted JPS6455821A (en) 1987-08-26 1987-08-26 Rapid cooling type heat treating apparatus

Country Status (2)

Country Link
US (1) US4925388A (en])
JP (1) JPS6455821A (en])

Families Citing this family (288)

* Cited by examiner, † Cited by third party
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JPH0485152U (en]) * 1990-11-29 1992-07-23
JPH0590214A (ja) * 1991-09-30 1993-04-09 Tokyo Ohka Kogyo Co Ltd 同軸型プラズマ処理装置
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US5947718A (en) * 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
NL1005541C2 (nl) * 1997-03-14 1998-09-18 Advanced Semiconductor Mat Werkwijze voor het koelen van een oven alsmede oven voorzien van een koelinrichting.
US6059567A (en) * 1998-02-10 2000-05-09 Silicon Valley Group, Inc. Semiconductor thermal processor with recirculating heater exhaust cooling system
JP4059568B2 (ja) 1998-06-22 2008-03-12 ボルグワーナー・モールステック・ジャパン株式会社 サイレントチェーン
US6572368B1 (en) * 2002-08-20 2003-06-03 Lectrotherm, Inc. Method and apparatus for cooling a furnace
US6952889B2 (en) * 2002-11-05 2005-10-11 Wafermasters, Inc. Forced convection assisted rapid thermal furnace
US7371998B2 (en) * 2006-07-05 2008-05-13 Semitool, Inc. Thermal wafer processor
US8539974B2 (en) 2010-04-13 2013-09-24 Sandvik Thermal Process, Inc. Forced-fluid switch
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US20120168143A1 (en) * 2010-12-30 2012-07-05 Poole Ventura, Inc. Thermal Diffusion Chamber With Heat Exchanger
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